
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
PARAMETER
V
V
SYMBOL
KBPC25
UNIT
420
08
560 700 840
600 800 1000 1200
06
12
10
600 800 1000 1200
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified output current (Fig.1)
Peak forward surge current single sine-wave superimposed on
rated load
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
V
RRM
V
RMS
I
FSM
V
DC
I
F(AV)
V
ISO
2
I t
T
J
2500
374
25
-40 to 150
300
2
A s
A
A
V
ºC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
PARAMETER
V
µA
SYMBOL
KBPC25
UNIT
08
06
12
10
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
Typical junction capacitance per diode
V
F
I
R
C
J
300
3000
1.1
5
pF
voltage per diode
TEST
CONDITIONS
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
PARAMETER
°C/W
SYMBOL
KBPC25
UNIT
08
06
12
10
Typical thermal resistance
(1) With heatsink
(1)
R
θJC
1.9
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with
Notes
M5 screw
PRIMARY CHARACTERRISTICS
I
F(AV)
25A
V
RRM
600V to 1200V
1.1V
5 µA
150ºC
I
FSM
I
R
V
F
T
J max.
300A
Storage temperature range
T
STG
-25 to 125
ºC
I = 12.5A
F
T = 25°C
A
4V, 1MHz
T = 150°C
A
Page 2 of 3
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KBPC25