DMHC3025LSDQ
Document number: DS37220 Rev. 1 - 2
7 of 9
www.diodes.com
May 2014
© Diodes Incorporated
DMHC3025LSDQ
NEW PRODUCT
ADVANCE INFORMATION
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 18 On-Resistance Variation with Temperature
, D
AIN-S
E
N-
ESISTAN
E ( )
DS(on)
Ω
V= -10V
I= A
GS
D
-10
V=5V
I= A
GS
D
-4.
-5
0.5
1.0
1.5
2.0
2.5
3.0
V,
A
E
ES
LD V
L
A
E (V)
GS(TH)
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 19 Gate Threshold Variation vs. Ambient Temperature
A
-I = 1mA
D
-I = 250µA
D
0 0.3 0.6 0.9 1.2 1.5
10
15
20
-I , S
E
E
(A)
S
0
5
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 20 Diode Forward Voltage vs. Current
SD
T= -55C
A
°
T= 25C
A
°
T= 85C
A
°
T= 125C
A
°
T= 150C
A
°
C , JUNCTION CAPACITANCE (pF)
T
1,000
10
100
0 5 10 15 20 25 30
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 21 Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 22 Gate-Charge Characteristics
g
0
2
4
6
8
-V ,
ATE-S
E V
LTA
E (V)
GS
10
V = -15V
I= -6A
DS
D
