2SJ356
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(j-a)
- Transient Thermal Resistance - ˚C/W
1 m
1 000
100
10
1
PW - Pulse Width - s
10 m 100 m 1 10 100
Single pulse
Using ceramic substrate of
7.5 cm
2
× 0.7 mm
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
SD
- Diode Forward Current -A
–0.2
–10
–1
–0.1
–0.01
–0.001
–0.0001
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
–1
10 000
1 000
100
10
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0
1 000
100
10
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
t
rr
- Reverse Recovery Time - ns
–0.05
1 000
100
10
I
F
- Diode Forward Current -A
C
iss
–1.2–0.4 –0.6 –0.8 –1.0
V
GS
= 0
Pulsed
–10 –100
V
GS
= 0
f = 1 MHz
C
oss
C
rss
–1 –10
V
DD
= –25 V
V
GS(on)
= –10 V
t
d(off)
t
f
t
d(on)
t
r
–10–0.1 –0.5 –1 –5
V
GS
= 0
di/dt = 50 A/ s
µ
