1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ356
P-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
Document No. D11218EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in mm)
1.6 ±0.2
4.5 ±0.1
0.42
±0.06
0.8 MIN.
1.5
0.42
±0.06
0.47
±0.06
3.0
2.5 ±0.1
4.0 ±0.25
0.41
+0.03
–0.05
1.5 ±0.1
S
D
G
EQUIVALENT CIRCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S:
D:
G:
Source
Drain
Gate
Marking: PR
The 2SJ356 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
• Can be directly driven by 5-V IC
• Low ON resistance
RDS(on) = 0.95 Ω MAX. @VGS = –4 V, ID = –1.0 A
R
DS(on) = 0.50 Ω MAX. @VGS = –10 V, ID = –1.0 A
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 –60 V
Gate to Source Voltage VGSS VDS = 0 –20/+10 V
Drain Current (DC) ID(DC) ± 2.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms ± 4.0 A
Duty cycle ≤ 1 %
Total Power Dissipation PT 16 cm
2
× 0.7 mm, ceramic substrate used 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.
Take adequate preventive measures against static electricity when handling this product.
The information in this document is subject to change without notice.
