SILICON PLANAR POWER ZENER DIODES
For use in Stabilizing and Clipping Circuits with High Power Rating
Hermetically Sealed, Glass Silicon Diodes
ABSOLUTE MAXIMUM RATINGS (T
THERMAL CHARACTERISTICS
Junction to Ambient in free air
ELECTRICAL CHARACTERISTICS (T
a
=25°C unless specified otherwise) V
F
<1.2V at 200mA
Dynamic
Test
Reverse
at I
Z
test
at I
Z
test
I
R
= 0.5µµA
r
zj
(ΩΩ)
(mA) V
R
(V)
5.0 7 100 >0.5
5.4 5 100 >0.7
6.0 2 100 >1.5
6.6 2 100 >2.0
7.2 2 100 >3.0
7.9 2 100 >5.0
8.7 2 100 >6.0
9.6 4 50 >7.0
10.6 4 50 >7.5
11.6 7 50 >8.5
12.7 7 50 >9.0
23.3 13 25 >17
32.0 20 25 >22.5
38.0 60 10 >27
*Valid provided that electrodes are kept at ambient temperature
**Pulse Condition : 20ms < tp <50ms
ZMY4.7_100V Rev081105E
K/W
*Admissible
Zener Current
at I
Z
test
(mA)
VALUE
1.3
175
- 55 to +175
115.3
UNIT
W
°C
165
150
135
+7…..+12
+7…..+12
+5…..+9
+5…..+10
+5…..+10
128
110
100
89
82
74
66
60
+7…..+11
ZMY4.7 - ZMY100
25
20
°C
34.0
28.0
10.4
11.4
20.8
0…..7
0…..7
+3…..+8
6.4
7.0
7.7
8.5
9.4
ZMY22
Device #
ZMY4.7
ZMY6.8
ZMY7.5
**Zener Voltage
4.4
ZMY30
ZMY36
SYMBOL
*P
D
Power Dissipation
V
Z
at I
ZT
*R
th (j-a)
T
j
Temp. Coeff. of
Zener volt.
Junction Temperature
T
stg
Storage Temperature Range
ZMY5.1
ZMY5.6
ZMY6.2
-7…..+4
-6…..+5
-3…..+5
-1…..+6
4.8
at I
Z
test
αα V
10
-4
/K
5.2
5.8
(V)
34
ZMY8.2
ZMY9.1
+3…..+8
ZMY10
ZMY11
ZMY12
Non Repetitive Peak Power Disspation,
P
zsm
5.0 W
Continental Device India Limited
Data Sheet Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
