SOT2 3 SILICON VARIABLE
CAPACITANCE DIODES
ISSUE 5 – JANUARY 1998
FEATURES
* Close Tolera nce C- V Charac t e r i stics
* High Tu ning Ratio
*Low I
R
Enabling Excellent Phase Noise Performance
(I
R
Typically <200pA at 25V)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL MAX UNIT
Forward Current I
F
200 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
=25°C)
PARAMETER SYMBOL MIN TYP MAX UNIT CONDITIONS
Rever se Brea kdown
Voltage
V
BR
25 V
I
R
=10µA
Rever se Volta ge Lea kage I
R
0.2 10 nA V
R
=20V
Temperature Coefficient
of Capacitance
η
0.03 0.04 %/°C V
R
=3V, f=1MHz
TUNING CHARACTERISTICS (at T
amb
=25°C)
PART NO
Nominal Capacitance (pF)
V
R
=2V, f=1MHz
Minimum
Q
@ V
R
=3V
f=50MHz
Capacitance Rat i o
C
2
/ C
20
at f=1MHz
MIN NOM MAX MIN MAX
ZC830A 9.0 10.0 11.0 300 4.5 6.0
ZC831A 13.5 15.0 16.5 300 4.5 6.0
ZC832A 19.8 22.0 24.2 200 5.0 6.5
ZC833A 29.7 33.0 36.3 200 5.0 6.5
ZC834A 42.3 47.0 51.7 200 5.0 6.5
ZC835A 61.2 68.0 74.8 100 5.0 6.5
ZC836A 90.0 100.0 110.0 100 5.0 6.5
Note:
No suffix
±20% (e.g. ZC830), suffix B ± 5% (e.g. ZC830B)
Spice parameter data is avai l able upon request for this device
ZC830/A/B
to
ZC836/A/B
1
3
2
SOT23
1
3
