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WPM2005
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.0
0.1
0.2
0.3
0.4
012345
T
J
= 150_C
I
D
=-2.7A
10
1
Source-Drain Diode Forward Voltage On-Resis tance vs. Gate-to-Source Voltage
-- On-Resistance (r
DS(on)
8 )
-V
SD GS
-- Gate-to-Source Voltage (V)
-- Source Current (A)-I
S
T
J
=25_C
0
30
50
10
20
Power (W)
Single Pulse Power
Time (sec)
40
1 100 6001010
-- 1
10
-- 2
10
-- 4
10
-- 3
10
-- 3
10
-- 2
1 10 60010
-- 1
10
-- 4
100
-- 0 . 2
-- 0 . 1
0.0
0.1
0.2
0.3
0.4
--50 --25 0 25 50 75 100 125 150
I
D
=-250 mA
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
Variance (V)-V
GS(th)
T
J
-- Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Bas e = R
thJA
_C/W
3. T
JM
-- T
A
=P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
--Source-to-DrainVoltage(V) -V
=89
0 2012 Rev 3.5
Jan,
