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WPM20058/TR

WPM20058/TR首页预览图
型号: WPM20058/TR
PDF文件:
  • WPM20058/TR PDF文件
  • WPM20058/TR PDF在线浏览
功能描述: Power MOSFET and Schottky Diode
PDF文件大小: 1599.72 Kbytes
PDF页数: 共8页
制造商: WILLSEMI[Will Semiconductor Ltd.]
制造商LOGO: WILLSEMI[Will Semiconductor Ltd.] LOGO
制造商网址: http://www.willsemi.com/index.php?siteid=2
捡单宝
PDF页面索引
100%
WPM2005
WPM2005
Power MOSFET and Schottky Diode
Features
z Featuring a MOSFET and Schottky Diode
z Independent Pinout to each Device to Ease Circuit Design
z
Ultra Low V
F
Schottky
Applications
z Li--Ion Battery Charging
z High Side DC-DC Conversion Circuits
z High Side Drive for Small Brushless DC Motors
z
Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (T
J
= 25ć unless otherwise noted)
SCHOTTKY DIODE MAXIMUM RATINGS(T
J
= 25ć unless otherwise noted)
Parameter Symbol Limits Unit
Peak repetitive reverse voltage V
RRM
20 V
DC Blocking voltage V
R
20 V
Average rectified forward current I
F
1 A
http://www.willsemi.com
Page 1
DFN3×2-8L
.
Marking:
pin connections:
8
7
6
54
3
2
1
C
C
D
D
A
A
S
G
1
8
C
D
JA
J = Specific Device Code
A = Date Code
Order information
PartNumber Package Shipping
WPM2005Ͳ8/TR DFN3*2- 8 3000Tape&Reel
L
Parameter Symbol Value Units
DrainïtoïSource Voltage V
DS
ï20 V
GateïtoïSource Voltage V
GS
±8.0 V
Continuous Drain
Current (Note 1)
Steady
State
T
J
= 25°C
I
D
ï2.9
A
T
J
= 85°C ï1.8
t 5 s T
J
= 25°C ï3.7
Power Dissipation
(Note 1)
Steady
State
T
J
= 25°C
P
D
1.4
W
t 5 s 2.2
Pulsed Drain Current
t
p
= 10 ms
I
DM
ï13 A
Operating Junction and Storage Temperature T
J
, T
STG
ï55 to
150
°C
Source Current (Body Diode) I
S
1.7 A
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
T
L
260 °C
1. Surface Mounted on FR4 Board using 1 in sq pad size, 1oz Cu.
0 2012 Rev 3.5
Jan,
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