WNM3038
Will Semiconductor Ltd. 1 Feb,2019- Rev.1.1
WNM3038
Single N-Channel, 30V, 22A, Power MOSFET
Description
The WNM3038 is N-Channel enhancement MOS Field
Effect Transistor. Uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge.
This device is suitable for use in DC-DC conversion,
power switch and charging circuit. Standard Product
WNM3038 is Pb-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package PDFN3333-8L
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
PDFN3333-8L
Pin configuration (Top view)
3038 =Device Code
NS =Special Code
Y = Year
W = Week(A~z)
Marking
Order information
V
DS
(V) Typical R
DS(on)
(mΩ)
30
6.0 @ V
GS
=10V
8.5 @ V
GS
=4.5V
Device Package Shipping
WNM3038-8/TR PDFN3333-8L 3000/Tape&Reel
Http://www.sh-willsemi.com
303 8
NS
Y
W
