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WF512K32F-70G2UM5A

WF512K32F-70G2UM5A首页预览图
型号: WF512K32F-70G2UM5A
PDF文件:
  • WF512K32F-70G2UM5A PDF文件
  • WF512K32F-70G2UM5A PDF在线浏览
功能描述: 512Kx32 5V FLASH MODULE, SMD 5962-94612
PDF文件大小: 159.55 Kbytes
PDF页数: 共15页
制造商: ETC1[List of Unclassifed Manufacturers]
制造商LOGO: ETC1[List of Unclassifed Manufacturers] LOGO
制造商网址:
捡单宝WF512K32F-70G2UM5A
PDF页面索引
120%
3
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
Parameter Symbol Conditions Min Max Unit
Input Leakage Current ILI VCC = 5.5, VIN = GND or VCC 10 µA
Output Leakage Current ILOx32 VCC = 5.5, VIN = GND or VCC 10 µA
VCC Active Current for Read (1) ICC1 CS = VIL, OE = VIH, f = 5MHz 190 mA
VCC Active Current for Program or Erase (2) ICC2 CS = VIL, OE = VIH 240 mA
VCC Standby Current ICC4 VCC = 5.5, CS = VIH, f = 5MHz 6.5 mA
VCC Static Current ICC3 VCC = 5.5, CS = VIH 0.6 mA
Output Low Voltage VOL IOL = 8.0 mA, VCC = 4.5 0.45 V
Output High Voltage VOH1 IOH = 2.5 mA, VCC = 4.5 0.85 X VCC V
Low V
CC Lock-Out Voltage VLKO 3.2 4.2 V
WF512K32-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,
inputs may overshoot V
SS to -2.0 V for periods of up to 20ns. Maximum DC
voltage on output and I/O pins is V
CC + 0.5V. During voltage transitions,
outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9
may overshoot Vss to -2V for periods of up to 20ns. Maximum DC input
voltage on A
9 is +13.5V which may overshoot to 14.0 V for periods
up to 20ns.
DC CHARACTERISTICS - CMOS COMPATIBLE
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter Unit
Operating Temperature -55 to +125 °C
Supply Voltage Range (VCC) -2.0 to +7.0 V
Signal voltage range (any pin except A9) (2) -2.0 to +7.0 V
Storage Temperature Range -65 to +150 °C
Lead Temperature (soldering, 10 seconds) +300 °C
Data Retention (Mil Temp) 20 years
Endurance - write/erase cycles (Mil Temp) 100,000 cycles min.
A
9 Voltage for sector protect (VID) (3) -2.0 to +14.0 V
DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
NOTES:
1. The I
CC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically
is less than 2 mA/MHz, with OE at V
IH.
2. I
CC active while Embedded Algorithm (program or erase) is in progress.
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Min Max Unit
Supply Voltage VCC 4.5 5.5 V
Input High Voltage VIH 2.0 VCC + 0.5 V
Input Low Voltage VIL -0.5 +0.8 V
Operating Temp. (Mil.) TA -55 +125 °C
Operating Temp. (Ind.) TA -40 +85 °C
A
9 Voltage for Sector Protect VID 11.5 12.5 V
LOW CAPACITANCE CQFP
(T
A = +25°C)
Parameter
Symbol
Conditions Max Unit
OE capacitance COE VIN = 0 V, f = 1.0 MHz 32 pF
CQFP G4 capacitance CWE VIN = 0 V, f = 1.0 MHz 32 pF
CS1-4 capacitance CCS VIN = 0 V, f = 1.0 MHz 15 pF
Data I/O capacitance CI/O VI/O = 0 V, f = 1.0 MHz 15 pF
Address input
capacitance C
AD VIN = 0 V, f = 1.0 MHz 32 pF
This parameter is guaranteed by design but not tested.
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions Max Unit
OE capacitance COE
V
IN
= 0 V, f = 1.0 MHz
50 pF
WE
1-4 capacitance CWE
V
IN
= 0 V, f = 1.0 MHz
pF
HIP (PGA) 20
CQFP G4T 50
CQFP G2U/G1U 15
CS1-4 capacitance CCS
V
IN
= 0 V, f = 1.0 MHz
20 pF
Data I/O capacitance CI/O
V
I/O
= 0 V, f = 1.0 MHz
20 pF
Address input capacitance C
AD
V
IN
= 0 V, f = 1.0 MHz
50 pF
This parameter is guaranteed by design but not tested.
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