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WEDPS512K32LV-17BC

WEDPS512K32LV-17BC首页预览图
型号: WEDPS512K32LV-17BC
PDF文件:
  • WEDPS512K32LV-17BC PDF文件
  • WEDPS512K32LV-17BC PDF在线浏览
功能描述: 512Kx32 SRAM 3.3V MULTI-CHIP PACKAGE
PDF文件大小: 217.97 Kbytes
PDF页数: 共7页
制造商: WEDC[White Electronic Designs Corporation]
制造商LOGO: WEDC[White Electronic Designs Corporation] LOGO
制造商网址: http://www.whiteedc.com
捡单宝WEDPS512K32LV-17BC
PDF页面索引
120%
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
WEDPS512K32V-XBX
June 2004
Rev. 5
NOTE: Refer to Application Note "PBGA Thermal Resistance Correlation" at
www.wedc.com in the application notes section for modeling conditions.
Parameter Symbol Min Max Unit
Operating Temperature T
A
-55 +125 °C
Storage Temperature T
STG
-65 +150 °C
Signal Voltage Relative to GND V
G
-0.5 4.6 V
Junction Temperature T
J
150 °C
Supply Voltage V
CC
-0.5 4.6 V
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Min Max Unit
Supply Voltage V
CC
3.0 3.6 V
Input High Voltage V
IH
2.2 V
CC
+ 0.3 V
Input Low Voltage V
IL
-0.3 +0.8 V
DC CHARACTERISTICS
V
CC
= 3.3V ± 0.3V, -55°C T
A
+125°C
Parameter Symbol Conditions
Min Max
Units
Input Leakage Current I
LI
V
IN
= GND to V
CC
10 µA
Output Leakage Current I
LO
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
10 µA
Operating Supply Current (x 32 Mode) I
CC
x 32 CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 3.6V 400 mA
Standby Current I
SB
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 3.6V 120 mA
Output Low Voltage V
OL
I
OL
= 4.0mA 0.4 V
Output High Voltage V
OH
I
OH
= -4.0mA 2.4 V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V.
Contact factory for low power option.
DATA RETENTION CHARACTERISTICS (WEDPS512K32LV-XBX only)
-55°C T
A
+125°C
Parameter Symbol Conditions
Min Max
Units
Data Retention Voltage V
CC
V
CC
= 2.19V 2.19 V
Data Retention Current I
CCDR
CS = V
CC
- 0.2V 8.0 mA
CS# OE# WE# Mode Data I/O Power
H X X Standby High Z Standby
L L H Read Data Out Active
L X L Write Data In Active
L H H Out Disable High Z Active
CAPACITANCE
Ta = +25°C
Parameter
Symbol
Conditions Max Unit
OE# capacitance C
OE
V
IN
= 0 V, f = 1.0 MHz
30 pF
WE
1-4
# capacitance C
WE
V
IN
= 0 V, f = 1.0 MHz
10 pF
CS
1-4
# capacitance C
CS
V
IN
= 0 V, f = 1.0 MHz
10 pF
Data I/O capacitance C
I/O
V
I/O
= 0 V, f = 1.0 MHz
10 pF
Address input capacitance C
AD
V
IN
= 0 V, f = 1.0 MHz
30 pF
This parameter is guaranteed by design but not tested.
BGA THERMAL RESISTANCE
Parameter Symbol Max Unit Note
Junction to Ambient (No Airfl ow)
Theta JA 16.9 °C/W 1
Junction to Ball
Theta JB 11.3 °C/W 1
Junction to Case (Top)
Theta JC 9.8 °C/W 1
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