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WEDPN16M72V-125B2C

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型号: WEDPN16M72V-125B2C
PDF文件:
  • WEDPN16M72V-125B2C PDF文件
  • WEDPN16M72V-125B2C PDF在线浏览
功能描述: 16Mx72 Synchronous DRAM
PDF文件大小: 442.21 Kbytes
PDF页数: 共14页
制造商: WEDC[White Electronic Designs Corporation]
制造商LOGO: WEDC[White Electronic Designs Corporation] LOGO
制造商网址: http://www.whiteedc.com
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White Electronic Designs
February 2005
Rev. 3
WEDPN16M72V-XB2X
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
GENERAL DESCRIPTION
The 128MByte (1Gb) SDRAM is a high-speed CMOS,
dynamic random-access, memory using 5 chips containing
268,435,456 bits. Each chip is internally confi gured as a
quad-bank DRAM with a synchronous interface. Each of
the chip’s 67,108,864-bit banks is organized as 8,192 rows
by 512 columns by 16 bits.
Read and write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for a
programmed number of locations in a programmed
sequence. Accesses begin with the registration of an
ACTIVE command, which is then followed by a READ or
WRITE command. The address bits registered coincident
with the ACTIVE command are used to select the bank
and row to be accessed (BA0, BA1 select the bank; A0-12
select the row). The address bits registered coincident
with the READ or WRITE command are used to select
the starting column location for the burst access.
The SDRAM provides for programmable READ or WRITE
burst lengths of 1, 2, 4 or 8 locations, or the full page, with
a burst terminate option. An AUTO PRECHARGE function
may be enabled to provide a self-timed row precharge that
is initiated at the end of the burst sequence.
The 1Gb SDRAM uses an internal pipelined architecture to
achieve high-speed operation. This architecture is compatible
with the 2n rule of prefetch architectures, but it also allows
the column address to be changed on every clock cycle to
achieve a high-speed, fully random access. Precharging one
bank while accessing one of the other three banks will hide
the precharge cycles and provide seamless, high-speed,
random-access operation.
16Mx72 Synchronous DRAM
FEATURES
High Frequency = 100, 125, 133MHz
Package:
219 Plastic Ball Grid Array (PBGA), 21 x 25mm
Single 3.3V ±0.3V power supply
Fully Synchronous; all signals registered on positive
edge of system clock cycle
Internal pipelined operation; column address can be
changed every clock cycle
Internal banks for hiding row access/precharge
Programmable Burst length 1,2,4,8 or full page
8,192 refresh cycles
Commercial, Industrial and Military Temperature
Ranges
Organized as 16M x 72
Weight: WEDPN16M72V-XB2X - 2.5 grams typical
BENEFITS
60% SPACE SAVINGS
Reduced part count
Reduced I/O count
• 19% I/O Reduction
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
Laminate interposer for optimum TCE match
Upgradeable to 32M x 72 density (contact factory
for information)
* This product is subject to change without notice.
Discrete Approach
ACTUAL SIZE
S
A
V
I
N
G
S
Area 5 x 265mm
2
= 1328mm
2
525mm
2
60%
I/O
5 x 54 pins = 270 pins 219 Balls 19%
Count
21
25
11.9 11.9 11.9 11.9 11.9
22.3
54
TSOP
54
TSOP
54
TSOP
54
TSOP
54
TSOP
White Electronic Designs
WEDPN16M72V-XB2X
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