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WBCT0303AA011002KF

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型号: WBCT0303AA011002KF
PDF文件:
  • WBCT0303AA011002KF PDF文件
  • WBCT0303AA011002KF PDF在线浏览
功能描述: Wire Bondable Chip Resistors
PDF文件大小: 359.44 Kbytes
PDF页数: 共3页
制造商: TTELEC[TT Electronics.]
制造商LOGO: TTELEC[TT Electronics.] LOGO
制造商网址: http://www.ttelectronics.com/
捡单宝WBCT0303AA011002KF
PDF页面索引
120%
Wire Bondable
Chip Resistors
WBC Series
Discreteortappedschemacs
MILinspeconavailable
High resistor density
General Note
IRC reserves the right to make changes in product specification without notice or liability.
All information is subject to IRC’s own data and is considered accurate at time of going to print.
A subsidiary of
TT electronics plc
• Corpus Christi Texas 78411 USA
© IRC Advanced Film Division
Telephone: 361 992 7900 • Facsimile: 361 992 3377 • Website: www.irctt.com
WBC Series Issue January 2009 Sheet 1 of 3
Wire Bondable
Chip Resistors
Discrete or tapped schematics
MIL inspection available
High resistor density
WBC Series
IRC’s WBC series wire bondable chip resistors are ideally suited for the most demanding hybrid application.
The WBC combines IRC’s TaNSil
®
tantalum nitride thin film technology with silicon substrate processing to
produce an extremely small tantalum nitride thin film technology with silicon substrate processing to produce
an extremely small footprint device with the proven stability, reliability and moisture performance of IRC’s TaNSil
®
resistor film.
Available in a wide range of tolerances and temperature coefficients to fit a variety of hybrid circuit applica-
tions. Custom resistance values, sizes and schematics are available on request from the factory.
Absolute Tolerance
to ±0.1%
Absolute TCR
to ±25ppm/°C
Package Power Rating
(@ 70°C)
250mW
Rated Operating Voltage
(not to exceed P x R )
100V
Operating Temperature
-55°C to +150°C
Noise
<-30dB
Substrate Material
Oxidized Silicon
(10KÅ SiO
2
min)
Substrate Thickness
0.010˝ ±0.001
(0.254mm ±0.025)
Bond Pad
Metallization
Aluminum 10KÅ minimum
Gold 15KÅ minimum
Backside
R0202 and
T0303
Silicon
(Al / Au optional)
B0202
1
3KÅ Au minimum
10KÅ Al minimum
Passivation
Silicon Dioxide or
Silicon Nitride
100.0± ˝020.0
)520.0± mm805.0(
100.0± ˝020.0
)520.0± mm805.0(
0.020˝ ±0.001
(0.508mm ±0.025)
0.020˝ ±0.001
(0.508mm ±0.025)
100.0± ˝030.0
)520.0± mm267.0(
0.030˝ ±0.001
(0.762mm ±0.025)
0.004˝ min bond pad size
0.004˝ min bond pad size
Back contact
Top contact
Physical Data
R0202 - Discrete
T0303 - Tapped network ½R + ½R
B0202 - Discrete back contact
1
Top contact
pad chamfered
R
R
½R
½R
0.004˝ min bond pad size
Electrical Data
1
Note 1: Not recommended for new designs
Resistors
AllpartsarePb-freeandcomplywithEUDirecve2011/65/EU(RoHS2)
05.17
General Note
TT Electronics reserves the right to make changes in product specication without notice or liability.
All information is subject to TT Electronics’ own data and is considered accurate at time of going to print.
© TT Electronics plc
http://www.ttelectronics.com/resistors
BI Technologies IRC Welwyn
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