W83877TF/W83877TG
-124 -
12. SPECIFICATIONS
12.1 Absolute Maximum Ratings
PARAMETER RATING UNIT
Power Supply Voltage -0.5 to 7.0 V
Input Voltage -0.5 to VDD+0.5 V
Operating Temperature 0 to +70
° C
Storage Temperature -55 to +150
° C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
12.2 DC CHARACTERISTICS
(Ta = 0° C to 70° C, VDD = 5V ± 10%, VSS = 0V)
PARAMETER SYM. MIN. TYP. MAX. UNI CONDITIONS
I/O
8tc
- TTL level output pin with source-sink capabilities of 8 mA; CMOS level input voltage
Input Low Voltage VIL -0.5 0.3xV V
Input High Voltage VIH 0.7xVD VDD+0 V
Output Low Voltage VOL 0.4 V IOL = 8 mA
Output High Voltage VOH 2.4 V IOH = -8 mA
Input High Leakage ILIH +10
μA
V
IN = VDD
Input Low Leakage ILIL -10
μA
V
IN = 0V
I/O
12t
- TTL level bi-directional pin with source-sink capabilities of 12 mA
Input Low Voltage VIL -0.5 0.8 V
Input High Voltage VIH 2.0 VDD+0 V
Output Low Voltage VOL 0.4 V IOL = 12 mA
Output High Voltage VOH 2.4 V IOH = -12 mA
Input High Leakage ILIH +10
μA
V
IN = VDD
Input Low Leakage ILIL -10
μA
V
IN = 0V
I/O
24t
- TTL level bi-directional pin with source-sink capabilities of 24 mA
Input Low Voltage VIL -0.5 0.8 V
Input High Voltage VIH 2.0 VDD+0 V
Output Low Voltage VOL 0.4 V IOL = 24 mA
Output High Voltage VOH 2.4 V IOH = -24 mA
Input High Leakage ILIH +10
μA
V
IN = VDD
Input Low Leakage ILIL -10
μA
V
IN = 0V