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W25Q80BLSSIP

W25Q80BLSSIP首页预览图
型号: W25Q80BLSSIP
PDF文件:
  • W25Q80BLSSIP PDF文件
  • W25Q80BLSSIP PDF在线浏览
功能描述: 2.5V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
PDF文件大小: 2280.39 Kbytes
PDF页数: 共75页
制造商: WINBOND[Winbond]
制造商LOGO: WINBOND[Winbond] LOGO
制造商网址: http://www.winbond.com
捡单宝W25Q80BLSSIP
PDF页面索引
120%
W25Q80BL
- 46 -
9.2.28 Erase / Program Resume (7Ah)
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase
operation or the Page Program operation after an Erase/Program Suspend. The Resume instruction
“7Ah” will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY
bit equals to 0. After issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will be set
from 0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will
complete the program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume
instruction “7Ah” will be ignored by the device. The Erase/Program Resume instruction sequence is
shown in figure 26.
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be
issued within a minimum of time of “t
SUS
” following a previous Resume instruction.
Figure 26. Erase/Program Resume Instruction Sequence
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