SiT8209
Ultra-Performance Oscillator
Features
Any frequency between 80.000001 and 220 MHz accurate to
6 decimal places
100% pin-to-pin drop-in replacement to quartz-based oscillators
Ultra-low phase jitter: 0.5 ps (12 kHz to 20 MHz)
Frequency stability as low as ±10 PPM
Industrial or extended commercial temperature range
LVCMOS/LVTTL compatible output
Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Outstanding silicon reliability of 2 FIT or 500 million hour MTBF
Pb-free, RoHS and REACH compliant
Ultra-short lead time
Applications
SATA, SAS, Ethernet, 10-Gigabit Ethernet, SONET, PCI
Express, video, Wireless
Computing, storage, networking, telecom, industrial control
Table 1. Electrical Characteristics
[1]
Parameter Symbol Min. Typ. Max. Unit Condition
Output Frequency Range
f 80.000001
– 220 MHz
Frequency Stability
F_stab -10 – +10 PPM
Inclusive of Initial tolerance at 25 °C, and variations over
operating temperature, rated power supply voltage and load
-20 – +20 PPM
-25 – +25 PPM
-50 – +50 PPM
Operating Temperature Range
T_use
-20 – +70 °C Extended Commercial
-40 – +85 °C Industrial
Supply Voltage
Vdd 1.71 1.8 1.89 V Supply voltages between 2.5V and 3.3V can be supported.
Contact SiTime for guaranteed performance specs for supply
voltages not specified in this table.
2.25 2.5 2.75 V
2.52 2.8 3.08 V
2.97 3.3 3.63 V
Current Consumption
Idd – 34 36 mA
No load condition, f = 100 MHz, Vdd = 2.5V, 2.8V or 3.3V
– 30 33 mA
No load condition, f = 100 MHz, Vdd = 1.8V
OE Disable Current
I_OD – – 31 mA
Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled
Down
– – 30 mA
Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down
Standby Current
I_std – – 70
µA
Vdd = 2.5V, 2.8V or 3.3V,
ST
= GND, output is Weakly
Pulled Down
– – 10
µA
Vdd = 1.8 V.
ST
= GND, output is Weakly Pulled Down
Duty Cycle
DC 45 – 55 %
f <= 165 MHz, all Vdds.
40 – 60 %
f > 165 MHz, all Vdds.
Rise/Fall Time
Tr, Tf – 1.2 2 ns
15 pF load, 10% - 90% Vdd
Output Voltage High
VOH 90% – – Vdd
IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V)
IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V)
Output Voltage Low
VOL – – 10% Vdd
Input Voltage High
VIH 70% – – Vdd
Pin 1, OE or
ST
Input Voltage Low
VIL – – 30% Vdd
Pin 1, OE or
ST
Input Pull-up Impedance
Z_in
– 100 250
kΩ
Pin 1, OE logic high or logic low, or
ST
logic high
2 – –
MΩ
Pin 1,
ST
logic low
Startup Time
T_start – 7 10 ms
Measured from the time Vdd reaches its rated minimum value
OE Enable/Disable Time
T_oe – – 115 ns
f = 80 MHz, For other frequencies, T_oe = 100 ns + 3 cycles
Resume Time
T_resume
– – 10 ms
In standby mode, measured from the time
ST
pin
crosses 50% threshold. Refer to
RMS Period Jitter
T_jitt – 1.5 2 ps
f = 156.25 MHz, Vdd = 2.5V, 2.8V or 3.3V
– 2 3 ps
f = 156.25 MHz, Vdd = 1.8V
RMS Phase Jitter (random)
T_phj – 0.5 1 ps
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz
First year Aging
F_aging
-1.5 – +1.5 PPM 25°C
10-year Aging
-5 – +5 PPM 25°C
Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
Rev 1.1 January 2, 2017
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