The Smart Timing Choice
The Smart Timing Choice
SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Rev. 1.11 Revised May 27, 2013
SiT8008
Low Power Programmable Oscillator
Note:
1. All electrical specifications in the above table are specified with 15 pF output load at default drive strength and for all Vdd(s) unless otherwise stated.
Features Applications
Any frequency between 1 MHz and 110 MHz accurate to 6 decimal
places
Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books, SSD,
GPON, EPON, etc
Operating temperature from -40°C to 85°C. Refer to SiT8918 and
SiT8920 for high temperature options
Ideal for high-speed serial protocols such as: USB, SATA, SAS,
Firewire, 100M / 1G / 10G Ethernet, etc.
Excellent total frequency stability as low as ±20 PPM
Low power consumption of 3.6 mA typical
Programmable drive strength for improved jitter, system EMI
reduction, or driving large capacitive loads
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Instant samples with Time Machine II and field programmable
oscillators
Pb-free, RoHS and REACH compliant
Electrical Characteristics
[1]
Parameter and Conditions Symbol Min. Typ. Max. Unit Condition
Frequency Range
Output Frequency Range f1–110MHz
Frequency Stability and Aging
Frequency Stability F_stab -20 – +20 PPM Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply
voltage and load (15 pF ± 10%).
-25 – +25 PPM
-50 – +50 PPM
Operating Temperature Range
Operating Temperature Range T_use -20 – +70 °C Extended Commercial
-40 – +85 °C Industrial
Supply Voltage and Current Consumption
Supply Voltage Vdd 1.62 1.8 1.98 V Contact SiTime for 1.5V support
2.25 2.5 2.75 V
2.52 2.8 3.08 V
2.7 3.0 3.3 V
2.97 3.3 3.63 V
2.25 – 3.63 V
Current Consumption Idd – 3.8 4.5 mA
No load condition, f = 20 MHz, Vdd = 2.8V, 3.0V, 3.3V, 2.25V to 3.63V
–3.64.2mA
No load condition, f = 20 MHz, Vdd = 2.5V
–3.43.9mA
No load condition, f = 20 MHz, Vdd = 1.8V
OE Disable Current I_OD – – 4 mA Vdd = 2.5V to 3.3V, OE = GND, output is Weakly Pulled Down
– – 3.8 mA Vdd = 1.8V, OE = GND, output is Weakly Pulled Down
Standby Current I_std – 2.6 4.3 A
ST
= GND, Vdd = 2.8V to 3.3V, Output is Weakly Pulled Down
–1.42.5A
ST
= GND, Vdd = 2.5V, Output is Weakly Pulled Down
–0.61.3A
ST
= GND, Vdd = 1.8V, Output is Weakly Pulled Down
LVCMOS Output Characteristics
Duty Cycle DC 45 – 55 % All Vdds
Rise/Fall Time Tr, Tf – 1 2 ns Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
– 1.3 2.5 ns Vdd =1.8V, 20% - 80%
– – 2 ns Vdd = 2.25V - 3.63V, 20% - 80%
Output High Voltage VOH 90% – – Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
Output Low Voltage VOL – – 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Input Characteristics
Input High Voltage VIH 70% – – Vdd
Pin 1, OE or ST
Input Low Voltage VIL – – 30% Vdd
Pin 1, OE or ST
Input Pull-up Impedence Z_in – 87 100 k
Pin 1, OE logic high or logic low, or ST logic high
2––M
Pin 1, ST
logic low
