Vishay Siliconix
Si7252DP
New Product
Document Number: 62634
S12-2186-Rev. A, 10-Sep-12
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Dual N-Channel 100 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Power MOSFET
•100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Primary Side Switching
• Synchronous Rectification
• DC/AC Inverters
Notes:
a. Based on T
C
= 25 °C
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 85 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() Max.
I
D
(A)
a
Q
g
(Typ.)
100
0.017 at V
GS
= 10 V
36.7
12.2 nC
0.018 at V
GS
= 7.5 V
35.7
0.020 at V
GS
= 6 V
33.9
Ordering Information:
Si7252DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
6.15 mm
5.15 mm
Bottom View
PowerPAK SO-8
N-Channel MOSFET
G
1
D
1
S
1
N-Channel MOSFET
G
2
D
2
S
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
100
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
36.7
A
T
C
= 85 °C
29.2
T
A
= 25 °C
10.1
b, c
T
A
= 85 °C
8
b, c
Pulsed Drain Current (t = 300 µs) I
DM
80
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
38
T
A
= 25 °C
2.9
b, c
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
20
Single Pulse Avalanche Energy E
AS
20 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
46
W
T
C
= 85 °C
29
T
A
= 25 °C
3.5
b, c
T
A
= 85 °C
2.2
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, f
t 10 s
R
thJA
26 35
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
2.2 2.7
