CREAT BY ART
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.09 g (approximately)
V
RRM
50 100 200 400 600 800 1000 V
V
RMS
35 70 140 280 420 560 700 V
V
DC
50 100 200 400 600 800 1000 V
I
F(AV)
A
t
rr
μs
C
J
pF
R
θJL
°C/W
T
J
°C
T
STG
°C
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1410018 Version: J15
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
Taiwan Semiconductor
1.15
10
250
Typical junction capacitance (Note 3) 40
V
I
R
μA
Storage temperature range - 55 to +150
Typical reverse recovery time (Note 2) 1.5
Typical thermal resistance 10
- 55 to +150Operating junction temperature range
Maximum instantaneous forward voltage (Note 1)
@ 3 A
V
F
Maximum average forward rectified current 3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
80 A
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER SYMBOL
S3
AB
S3
BB
S3AB - S3MB
3A, 50V - 1000V Surface Mount Rectifiers
S3
DB
S3
GB
S3
JB
S3
KB
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
DO-214AA (SMB)
S3
MB
Unit
