S3AB – S3MB 1 of 4 © 2006 Won-Top Electronics
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S3AB – S3MB
3.0A SURFACE MO UNT GLASS PASSIVATED STANDARD DIODE
Features
!
Glass Passivated Die Construction
!
Ideally Suited for Automatic Assembly B
!
Low Forward Voltage Drop
!
Surge Overload Rating to 100A Peak D
!
Low Power Loss A
!
Built-in Strain Relief F
!
Plastic Case Material has UL Flammability
Classification Rating 94V-O C H G
E
Mechanical Data
!
Case: SMB/DO-214AA, Molded Plastic
!
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
!
Polarity: Cathode Band or Cathode Notch
!
Marking: Type Number
!
Weight: 0.093 grams (approx.)
!
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic Symbol S3AB S3BB S3DB S3GB S3JB S3KB S3MB Unit
Peak Repetit i ve Revers e Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50 100 200 400 600 800 1000 V
RMS Reverse Voltage V
R(RMS)
35 70 140 280 420 560 700 V
Average Rectified Output Current @T
L
= 75°C I
O
3.0 A
Non-Repetiti ve P eak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method)
I
FSM
100 A
Forward Voltage @I
F
= 3.0A V
FM
1.20 V
Peak Reverse Current @T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 125°C
I
RM
5.0
250
µA
Reverse Recovery Time (Note 1) t
rr
2.5 µS
Typi cal Junction Capacitanc e (Note 2) C
j
60 pF
Typical Thermal Resistance (Note 3) R
JL
13 °C/W
Operating and Storage Temperature Range T
j,
T
STG
-65 to +150 °C
Note: 1. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A,
2. Measured at 1.0 MHz and applied reverse volt age of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm
2
land area.
WTE
POWER SEMICONDUCTORS
SMB/DO-214AA
Dim Min Max
A
3.30 3.94
B
4.06 4.70
C
1.91 2.11
D
0.152 0.305
E
5.08 5.59
F
2.13 2.44
G
0.051 0.203
H
0.76 1.27
All Dimensions in mm
