QS8K51
Datasheet
llElectrical characteristics (T
a
= 25°C) <Tr1 and Tr2>
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Input capacitance
C
iss
V
GS
= 0V
- 290 -
pFOutput capacitance
C
oss
V
DS
= 25V
- 30 -
Reverse transfer capacitance
C
rss
f = 1MHz
- 20 -
Turn - on delay time
t
d(on)
*4
V
DD
⋍ 50V,V
GS
= 10V
- 10 -
ns
Rise time
t
r
*4
I
D
= 1A
- 10 -
Turn - off delay time
t
d(off)
*4
R
L
= 49.9Ω
- 30 -
Fall time
t
f
*4
R
G
= 10Ω
- 15 -
llGate charge characteristics (T
a
= 25°C) <Tr1 and Tr2>
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Total gate charge
Q
g
*4
V
DD
⋍ 50V
- 4.7 -
nC
Gate - Source charge
Q
gs
*4
I
D
= 2A
- 1.2 -
Gate - Drain charge
Q
gd
*4
V
GS
= 5V
- 1.8 -
llBody diode electrical characteristics (Source-Drain) (T
a
= 25°C)
<Tr1 and Tr2>
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Continuous forward current
I
S
T
a
= 25℃
- - 1.0
A
Pulse forward current
I
SP
*1
- - 6
Forward voltage
V
SD
*4
V
GS
= 0V, I
S
= 2A
- - 1.2 V
*1 Pw≦10μs , Duty cycle≦1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
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3/11
20160831 - Rev.001