QS8K51
Datasheet
llThermal resistance
Parameter Symbol
Values
Unit
Min. Typ. Max.
Thermal resistance, junction - ambient
total
R
thJA
*2
- - 83.3
℃/W element - - 100
total
R
thJA
*3
- - 113
llElectrical characteristics (T
a
= 25°C) <Tr1 and Tr2>
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
100 - - V
Breakdown voltage
temperature coefficient
ΔV
(BR)DSS
I
D
= 1mA
- 116.9 - mV/℃
ΔT
j
referenced to 25℃
Zero gate voltage
drain current
I
DSS
V
DS
= 100V, V
GS
= 0V
- - 1 μA
Gate - Source
leakage current
I
GSS
V
DS
= 0V, V
GS
= ±20V
- - ±10 μA
Gate threshold
voltage
V
GS(th)
V
DS
= 10V, I
D
= 1mA
1.0 - 2.5 V
Gate threshold voltage
temperature coefficient
ΔV
GS(th)
I
D
= 1mA
- -3.6 - mV/℃
ΔT
j
referenced to 25℃
Static drain - source
on - state resistance
R
DS(on)
*4
V
GS
= 10V, I
D
= 2A - 240 325
mΩ V
GS
= 4.5V, I
D
= 2A - 250 340
V
GS
= 4.0V, I
D
= 2A - 260 355
Gate resistance
R
G
f = 1MHz, open drain - 8.5 - Ω
Forward Transfer
Admittance
|Y
fs
|
*4
V
DS
= 10V, I
D
= 2A
1.9 - - S
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20160831 - Rev.001
