QS8K51
100V Nch+Nch Small Signal MOSFET
Datasheet
llOutline
V
DSS
100V
R
DS(on)
(Max.) 325mΩ
I
D
±2A
TSMT8
P
D
1.5W
llFeatures
llInner circuit
1) Low on - resistance.
2) Small Surface Mount Package (TSMT8).
llPackaging specifications
Type
Packing
Embossed
Tape
llApplication Reel size (mm) 180
Switching Tape width (mm) 8
Basic ordering unit (pcs) 3000
Taping code TR
Marking K51
llAbsolute maximum ratings (T
a
= 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter Symbol Value Unit
Drain - Source voltage
V
DSS
100 V
Continuous drain current
I
D
±2 A
Pulsed drain current
I
DP
*1
±6 A
Gate - Source voltage
V
GSS
±20 V
Power dissipation
total
P
D
*2
1.5
W element 1.25
total
P
D
*3
1.1
Junction temperature
T
j
150 ℃
Operating junction and storage temperature range
T
stg
-55 to +150 ℃
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20160831 - Rev.001
