QS5U33
Transistor
1/4
4V Drive
Pch+SBD
MOSFET
QS5U33
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
Schottky Ba rrier DIODE
zFeatures
1) The QS5U33 combines Pch MOSFET with
a Schottky barrier diode in TSMT5 package.
2) Low on-state resistance w ith fa st switching.
3) Low voltage driv e (4V).
4) Built-in schottky barrier diode has low forward voltage.
zApplications
Load switch , DC/DC conversion
zPackaging specifications zEquivalent circuit
QS5U33
TR
3000
Type
Package
Code
Taping
Basic ordering unit (pieces)
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
∗2
∗1
(1) (2) (3)
(5) (4)
∗ A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
∗1 ESD protection diode
∗2 Body diode
Each lead has same dimensions
TSMT5
0
~
0.1
0.16
0.85
1.0MAX
0.7
0.3
~
0.6
(1)
(3)(2)
(4)(5)
2.8
1.6
0.4
1.9
2.9
0.950.95
Abbreviated symbol : U33
