Feb.1999
0
10
1
10
2
10
0
10
–1
10
–3
10
–2
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
–1
10
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
T
C
=25°C
500µ
S
100µ
S
DC
1m
S
1
10
7
5
4
3
2
–1
10
23457
0
10
23457
1
10
0
10
7
5
4
3
3
2
T
j
=25°C
T
j
=125°C
t
s
t
f
V
CC
=300V
I
C
=30A
I
B1
=0.6A
70
20
0
0
100
700
50
200 400
60
40
30
10
I
B2
=–1A
–5A
–3A
T
j
=125°C
300 500 600
100
90
60
40
20
0
0 16020
40 60 80 100 120 140
80
10
70
50
30
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0.4 0.8 1.2 1.6 2.0
2.4
T
j
=25°C
T
j
=125°C
753275327532
0.5
0.4
0.3
0.1
0
444
23457
0.2
75324
NON–REPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME t
s, tf
(µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE V
CE (V) CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO (V)
TIME (s)
COLLECTOR CURRENT I
C (A)
COLLECTOR CURRENT I
C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I
C (A)
MITSUBISHI TRANSISTOR MODULES
QM30TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Zth (j–c)
(°C/ W)
