1
QM3009K
P-Ch 30V Fast Switching MOSFETs
Symbol Parameter
Rating
Units
10s Steady State
V
DS
Drain-Source Voltage -30 V
V
GS
Gate-Source Voltage
±20 V
I
D
@T
A
=25℃ Continuous Drain Current, V
GS
@ -10V
1
-2.6 -2.3 A
I
D
@T
A
=70℃ Continuous Drain Current, V
GS
@ -10V
1
-2.1 -1.8 A
I
DM
Pulsed Drain Current
2
-4.6 A
P
D
@T
A
=25℃ Total Power Dissipation
3
1.32 1 W
P
D
@T
A
=70℃ Total Power Dissipation
3
0.84 0.64 W
T
STG
Storage Temperature Range -55 to 150 ℃
T
J
Operating Junction Temperature Range -55 to 150 ℃
Symbol Parameter
Typ.
Max. Unit
R
θJA
Thermal Resistance Junction-Ambient
1
--- 125 ℃/W
R
θJA
Thermal Resistance Junction-Ambient
1
(t ≤10s)
--- 95 ℃/W
R
θJC
Thermal Resistance Junction-Case
1
--- 80 ℃/W
BVDSS
RDSON
(VGS=10V)
ID
(TA=25
℃
)
-30V 135mΩ -2.3A
The QM3009K is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The QM3009K meet the RoHS and Green Product
requirement with full function reliability approved.
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
Green Device Available
General Description
Features
Applications
Load Switch
General switching purpose
Absolute Maximum Ratings
Thermal Data
SOT23 Pin Configuration
Product Summary
G
S
D
