SKP06N60, SKB06N60
SKA06N60
7Jul-02
E, SWITCH IN G EN ER GY LOSSE S
0A 3A 6A 9A 12A 15A
0.0m J
0.2m J
0.4m J
0.6m J
0.8m J
E
on
*
E
off
E
ts
*
E, SWITCH IN G EN ER GY LOSSE S
0Ω 50Ω 100Ω 150Ω
0.0m J
0.2m J
0.4m J
0.6m J
E
ts
*
E
on
*
E
off
I
C
, COLLECTOR CURRENT R
G
, GAT E RESI STOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
j
= 150°C, V
CE
= 400V,
V
GE
= 0/+15V, R
G
= 50Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
j
= 150°C, V
CE
= 400V,
V
GE
= 0/+15V, I
C
= 6A,
Dynamic test circuit in Figure E)
E, SWITCH IN G EN ER GY LOSSES
0°C 50°C 1 00°C 1 50°C
0.0m J
0.1m J
0.2m J
0.3m J
0.4m J
E
ts
*
E
on
*
E
off
T
j
, JUNCTION TEMPERA T URE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
CE
= 400V, V
GE
= 0/+15V,
I
C
= 6A, R
G
= 50Ω,
Dynamic test circuit in Figure E)
*) E
on
and E
ts
include losses
due to diode recovery.
*) E
on
and E
ts
include losses
due to diode recovery.
*) E
on
and E
ts
include losses
due to diode recovery.
