SKP06N60, SKB06N60
SKA06N60
3Jul-02
Switching Characteristic, Inductive Load, at T
j
=25 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time
t
d(on)
-2530
Rise time
t
r
-1822
Turn-off delay time
t
d(off)
- 220 264
Fall time
t
f
-5465
ns
Turn-on energy
E
on
- 0.110 0.127
Turn-off energy
E
off
- 0.105 0.137
Total switching energy
E
ts
T
j
=25°C,
V
CC
=400V,I
C
=6A,
V
GE
=0/15V,
R
G
=50Ω,
L
σ
1)
=180nH,
C
σ
1)
=250pF
Energy losses include
“tail” and di ode
reverse recovery.
- 0.215 0.263
mJ
Anti-Para llel Diod e Characterist ic
Diode reverse recovery time
t
rr
t
S
t
F
-
-
-
200
17
183
-
-
-
ns
Diode reverse recovery charge
Q
rr
- 200 - nC
Diode peak reverse recovery current
I
rrm
-2.8-A
Diode peak rate of fall of reverse
recovery current during t
b
di
rr
/dt
T
j
=25°C,
V
R
=200V, I
F
=6A,
di
F
/dt=200A/µs
- 180 -
A/µs
Switching Characteristic, Inductive Load, at T
j
=150 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time
t
d(on)
-2429
Rise time
t
r
-1720
Turn-off delay time
t
d(off)
- 248 298
Fall time
t
f
-7084
ns
Turn-on energy
E
on
- 0.167 0.192
Turn-off energy
E
off
- 0.153 0.199
Total switching energy
E
ts
T
j
=150°C
V
CC
=400V,I
C
=6A,
V
GE
=0/15V,
R
G
=50Ω,
L
σ
1)
=180nH,
C
σ
1)
=250pF
Energy losses include
“tail” and di ode
reverse recovery.
- 0.320 0.391
mJ
Anti-Para llel Diod e Characterist ic
Diode reverse recovery time
t
rr
t
S
t
F
-
-
-
290
27
263
-
-
-
ns
Diode reverse recovery charge
Q
rr
- 500 - nC
Diode peak reverse recovery current
I
rrm
-5.0-A
Diode peak rate of fall of reverse
recovery current during t
b
di
rr
/dt
T
j
=150°C
V
R
=200V, I
F
=6A,
di
F
/dt=200A/µs
- 200 -
A/µs
1)
Leakage inductance L
σ
a n d Stray capacity C
σ
due to dynamic test circuit in Figure E.
