SKP06N60, SKB06N60
SKA06N60
2Jul-02
Thermal Resistance
Max. Value
Parameter Symbol Conditions
SKP06N60
SKB06N60
SKA06N60
Unit
Characteristic
IGBT thermal resistance,
junction – case
R
thJC
1.85 3.9
Diode thermal resistance,
junction – case
R
thJCD
3.5 5.0
Thermal resistance,
junction – am bient
R
thJA
TO-220AB
TO220-3-31
62
65
SMD version, de vic e on PCB
1)
R
thJA
TO-263AB 40
K/W
Electrical Characteristic, at T
j
= 25 °C, unless otherwise specified
Value
Parameter Symbol Conditions
min. Typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V, I
C
=500µA
600 - -
Collector-emitter saturation voltage
V
CE(sat)
V
GE
= 15V, I
C
=6A
T
j
=25°C
T
j
=150°C
1.7
-
2.0
2.3
2.4
2.8
Diode forward voltage
V
F
V
GE
=0V, I
F
=6A
T
j
=25°C
T
j
=150°C
1.2
-
1.4
1.25
1.8
1.65
Gate-emitter threshold voltage
V
GE(th)
I
C
=250µA,V
CE
=V
GE
345
V
Zero gate voltage collector current
I
CES
V
CE
=600V,V
GE
=0V
T
j
=25°C
T
j
=150°C
-
-
-
-
20
700
µA
Gate-emitter leakage current
I
GES
V
CE
=0V,V
GE
=20V
- - 100 nA
Transconductance
g
fs
V
CE
=20V, I
C
=6A
-4.2-S
Dynamic Characteristic
Input capacitance
C
iss
- 350 420
Output capacitance
C
oss
-3846
Reverse transfer capacitance
C
rss
V
CE
=25V,
V
GE
=0V,
f=1MHz
-2328
pF
Gate charge
Q
Gate
V
CC
=480V, I
C
=6A
V
GE
=15V
-3242nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
TO-220AB - 7 - nH
Short circuit collector current
2)
I
C(SC)
V
GE
=15V,t
SC
≤10µs
V
CC
≤ 600V,
T
j
≤ 150°C
-60-A
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for
collector connection. PCB i s vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
