SKP06N60, SKB06N60
SKA06N60
1Jul-02
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower E
off
compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight param eter distrib uti on
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Isolated TO-220, 2.5kV, 60s
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V
CE
I
C
V
CE(sat)
T
j
Package Ordering Code
SKP06N60 600V 6A 2.3V
150°C
TO-220AB Q67040-S4230
SKB06N60 TO-263AB Q67040-S4231
SKA06N60 5A TO-220-3-31 Q67040-S4340
Maximum Ratings
Value
Parameter Symbol
SKP06N60
SKB06N60
SKA06N60
Unit
Collector-emitter voltage
V
CE
600 600 V
DC collector current
T
C
= 25°C
T
C
= 100°C
I
C
12
6.9
9
5.0
Pulsed col lector current, t
p
limited by T
jmax
I
Cpuls
24 24
Turn off safe operating area
V
CE
≤ 600V, T
j
≤ 150°C
-
24 24
Diode forward current
T
C
= 25°C
T
C
= 100°C
I
F
12
6
12
6
Diode pulsed current, t
p
limited by T
jmax
I
Fpuls
24 24
A
Gate-emitter voltage
V
GE
±20 ±20
V
Short circ uit withst and time
1)
V
GE
= 15V, V
CC
≤ 600V, T
j
≤ 150°C
t
SC
10 10
µs
Power diss ip ati on
T
C
= 25°C
P
tot
68 32
W
Mounting T or que, M3 Scr ew
2)
M
1.0 Nm
Operating junction and storage temperature
T
j
, T
stg
-55...+150 -55...+150
°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Maximum mounting processes: 3
P-TO-220-3-1
(TO-220AB)
P-TO-220-3-31
(FullPAK)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
G
C
E
