TLE 4261-2
Semiconductor Group 8 1998-11-01
Characteristics
V
I
=13.5 V; T
j
=25°C; V
5
≥ 6 V (unless otherwi se spe cified)
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Normal Operation
Output vol tage
V
Q
4.9 5.0 5.1 V I
Q
= 100 mA
–40°C ≤
T
j
≤ 125 °C
Output current
I
Q
––50µA0V ≤ V
I
≤ 2V; V
2
= V
I
;
–40°C ≤
T
j
≤ 125 °C
Output current
I
Q
500 1000 – mA V
I
= 17 V to 28 V
Current consumption
I
q
= I
I
– I
Q
I
q
––3.5mAI
Q
= 0 mA, V
W
>6 V
Current consumption
I
q
= I
I
– I
Q
I
q
––10mA6V ≤ V
I
≤ 28 V
I
Q
=150mA
Current consumption
I
q
= I
I
– I
Q
I
q
–5.065mA6V ≤ V
I
≤ 28 V
I
Q
=500mA
Current consumption
I
q
= I
I
– I
Q
I
q
–4080mAV
I
≤ 6V
I
Q
=500mA
Drop voltage
V
DR
– 0.35 0.5 V V
I
= 4.5 V; I
Q
=0.5A
Drop voltage
V
DR
–0.20.3VV
I
= 4.5 V; I
Q
=0.15A
Load regulation
∆V
Q
–1535mV25mA≤ I
Q
≤ 500 mA
Supply-voltage regulation
∆V
Q
–1550mVV
I
≤ 6 V to 28 V;
I
Q
=100mA
Supply-voltage regulation
∆V
Q
–525mVV
I
≤ 6 V to 16 V;
I
Q
=100mA
Ripple rejection
SVR
–54–dBf = 100 Hz;
V
r
=0.5V
SS
Temperature drift of output
voltage
α
VQ
–2×
10
–4
–1/°C–