BAR 64...
Semiconductor Group 2 Edition A01, 23.02.95
Electrical characteristics
at
T
A
= 25 °C, unless otherwise specified.
Parameter Symbol Value Unit
min. typ. max.
DC characteristics per diode
Breakdown voltage
I
R
= 5 µA
V
(BR)
200 - -
V
Forward voltage
I
F
= 50 mA
V
F
- - 1.1
V
Diode capacitance
V
R
= 20 V,
f
= 1 MHz
C
T
- 0.23 0.35
pF
Forward resistance
I
F
= 1 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
I
F
= 100 mA,
f
= 100 MHz
r
f
-
--
12.5
2.1
0.85
20
3.8
1.35
Ω
Charge carrier lifetime
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
τ
L
- 1.55 -
µs
Series inductance
L
s
- 1.4 - nH
Forward current
r
F
=
f
(
T
S
;
T
A
*
)
*
mounted on alumina BAR64
Forward current
r
F
=
f
(
T
S
;
T
A
*
)
per each diode BAR64-05,-05,-06
I
F
mA
T
T
A
S
T
T
A
S
I
F
mA
T
T
A
S
T
T
A
S
