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OP705C

OP705C首页预览图
型号: OP705C
PDF文件:
  • OP705C PDF文件
  • OP705C PDF在线浏览
功能描述: NPN Pho to tran sistor with Base-Emit ter Resistor
PDF文件大小: 476.88 Kbytes
PDF页数: 共2页
制造商: OPTEK[OPTEK Technologies]
制造商LOGO: OPTEK[OPTEK Technologies] LOGO
制造商网址: http://www.optekinc.com
捡单宝OP705C
供应商
型号
品牌
封装
批号
库存数量
备注
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  • 深圳市德州众泰科技有限公司

    16

    0755-8257535113360063783廖小姐深圳市福田区汉国中心55楼11012385

  • OP705C
  • TTElectronics/OptekTechnology 
  • 原装 
  • 2021+ 
  • 库存充足 
  • 原装正品 

PDF页面索引
120%
Fea tures
Narrow receiving angle
Variety of sensitivity ranges
T-1 package style
Small package size for space limited
applications
Base-emitter resistor provides ambient
light protection
De scrip tion
The OP705 series devices consist of
NPN silicon phototransistors molded in
blue tinted epoxy packages. The narrow
receiving angle provides excellent on-
axis coupling. These devices are 100%
production tested using infrared light for
close correlation with Opteks GaAs and
GaAlAs emitters.
The phototransistor has an internal base-
emitter resistor which provides protection
from low level ambient lighting
conditions. This feature is also useful
when the media being detected is semi-
transparent to infrared light in interruptive
applications.
Ab so lute Maxi mum Rat ings (T
A
= 25
o
C un less oth er wise noted)
Collector- Emitter Volt age............................................ 30 V
Emit ter Re verse Current........................................... 10 mA
Col lec tor DC Cur rent............................................. 30 mA
Stor age and Op er at ing Tem pera ture Range.................. -40
o
C to +100
o
C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron]........................................................ 260
o
C
(1)
Power Dis si pa tion............................................ 100 mW
(2)
Ò±¬»
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/
o
C above 25
o
C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
phototransistor being tested.
(4) The knee point irradiance is defined as the irradiance required to increase I
C(ON)
to50•• A.
Typi cal Per form ance Curves
Prod uct Bul le tin OP705
March 1999
NPN Pho to tran sistor with Base-Emit ter Resistor
Types OP705A, OP705B, OP705C, OP705D
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
̧°· ½¿´ Í°»½ ¬®¿´ λ -°±²
É¿ª» ´»²¹¬¸ ó ²³
5
Sche matic
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