© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 0
1 Publication Order Number:
NJT4030P/D
NJT4030P
Preferred Device
Bipolar Power Transistors
PNP Silicon
Features
• Collector −Emitter Sustaining Voltage −
V
CEO(sus)
= 40 Vdc (Min) @ I
C
= 10 mAdc
• High DC Current Gain −
h
FE
= 200 (Min) @ I
C
= 1.0 Adc
= 100 (Min) @ I
C
= 3.0 Adc
• Low Collector −Emitter Saturation Voltage −
V
CE(sat)
= 0.200 Vdc (Max) @ I
C
= 1.0 Adc
= 0.500 Vdc (Max) @ I
C
= 3.0 Adc
• SOT−223 Surface Mount Packaging
• Epoxy Meets UL 94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
• These are Pb−Free Devices
SOT−223
CASE 318E
STYLE 1
MARKING
DIAGRAM
Schematic
C 2,4
B 1 E 3
Top View Pinout
C
CEB
4
123
PNP TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
PIN ASSIGNMENT
http://onsemi.com
1
4030PG
AYW
A = Assembly Location
Y Year
W = Work Week
4030P = Specific Device Code
G = Pb−Free Package
