LY E676
Semiconductor Group 5 1998-11-05
Durchlaßstrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25 °C
Maximal zulässiger Durchlaßstrom
Max. permissible forward current
I
F
=
f
(
T
A
)
Relative Lichtstärke
I
V
/I
V(50 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25 °C
V
OHL00444
F
F
Ι
1.6
mA
10
1
10
5
-2
5
0
10
-1
5
10
1.8 2.0 2.2 V 2.4
10
2
T
OHL00446
A
0
F
Ι
0 20 40 60 80 C 100
mA
20
40
60
80
100
Ι
OHL00445
F
-1
10
V (50 mA)
Ι
10
-3
-2
-1
0
1
10
10
10
10
10
0
10
1
10
2
5
5
5
55mA
Ι
V