-6
-4
-2
0
2
4
6
2V/DIV
100 ns/DIV
V
IN
V
OUT
V
+
= +5V
V
-
= -5V
A = +5
500 mV/DIV
50 ns/DIV
V
+
= +2.5V
V
-
= -2.5V
A = +2
V
OUT
= 2V
R
L
= 150:
50 mV/DIV
25 ns/DIV
V
+
= +5V
V
-
= -5V
A = +2
V
OUT
= 0.2V
R
L
= 150:
500 mV/DIV
50 ns/DIV
V
+
= +2.5V
V
-
= -2.5V
A = +1
V
OUT
= 2V
R
L
= 1 k:
50 mV/DIV
25 ns/DIV
V
+
= +2.5V
V
-
= -2.5V
A = +2
V
OUT
= 0.2V
R
L
= 150:
50 mV/DIV
25 ns/DIV
V
+
= +1.5V
V
-
= -1.5V
A = +2
V
OUT
= 0.2V
R
L
= 150:
50 mV/DIV
25 ns/DIV
V
+
= +1.5V
V
-
= -1.5V
A = -1
V
OUT
= 0.2V
R
L
= 1 k:
50 mV/DIV
25 ns/DIV
V
+
= +5V
V
-
= -5V
A = -1
V
OUT
= 0.2V
R
L
= 1 k:
LMH6619Q
www.ti.com
SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
Typical Performance Characteristics (continued)
At T
J
= 25°C, A
V
= +1 (R
F
= 0Ω), otherwise R
F
= 2 kΩ for A
V
≠ +1, unless otherwise specified.
Small Signal Step Response Small Signal Step Response
Small Signal Step Response Small Signal Step Response
Small Signal Step Response Large Signal Step Response
Large Signal Step Response Overload Recovery Waveform
Application Information
The LMH6619Q is based on National Semiconductor’s proprietary VIP10 dielectrically isolated bipolar process.
This device family architecture features the following:
• Complimentary bipolar devices with exceptionally high f
t
(∼8 GHz) even under low supply voltage (2.7V) and
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