■ Clock Source (MOSC) =3.579545 MHz Crystal Oscillator
■ Main oscillator (MOSC) = enabled
■ Internal oscillator (IOSC) = disabled
Table 19-5. Detailed Power Specifications
Unit2.5 V V
DD25
3.3 V V
DD
, V
DDA
,
V
DDPHY
ConditionsParameter NameParameter
MaxNomMaxNom
mApending
a
108pending
a
48V
DD25
= 2.50 V
Code= while(1){} executed in Flash
Peripherals = All ON
System Clock = 50 MHz (with PLL)
Run mode 1
(Flash loop)
I
DD_RUN
mApending
a
52pending
a
5V
DD25
= 2.50 V
Code= while(1){} executed in Flash
Peripherals = All OFF
System Clock = 50 MHz (with PLL)
Run mode 2
(Flash loop)
mApending
a
100pending
a
48V
DD25
= 2.50 V
Code= while(1){} executed in SRAM
Peripherals = All ON
System Clock = 50 MHz (with PLL)
Run mode 1
(SRAM loop)
mApending
a
45pending
a
5V
DD25
= 2.50 V
Code= while(1){} executed in SRAM
Peripherals = All OFF
System Clock = 50 MHz (with PLL)
Run mode 2
(SRAM loop)
mApending
a
16pending
a
5V
DD25
= 2.50 V
Peripherals = All OFF
System Clock = 50 MHz (with PLL)
Sleep modeI
DD_SLEEP
mApending
a
0.21pending
a
4.6LDO = 2.25 V
Peripherals = All OFF
System Clock = IOSC30KHZ/64
Deep-Sleep modeI
DD_DEEPSLEEP
a. Pending characterization completion.
19.1.6 Flash Memory Characteristics
Table 19-6. Flash Memory Characteristics
UnitMaxNomMinParameter NameParameter
cycles-100,00010,000Number of guaranteed program/erase cycles
before failure
a
PE
CYC
years--10Data retention at average operating temperature
of 85˚C (industrial) or 105˚C (extended)
T
RET
µs--20Word program timeT
PROG
ms--20Page erase timeT
ERASE
487June 22, 2010
Texas Instruments-Production Data
Stellaris® LM3S8530 Microcontroller