Revision History
The revision history table notes changes made between the indicated revisions of the LM3S8530
data sheet.
Table 1. Revision History
DescriptionRevisionDate
■ Corrected base address for SRAM in architectural overview chapter.
■ Clarified system clock operation, adding content to “Clock Control” on page 68.
■ Clarified CAN bit timing examples.
■ In Signal Tables chapter, added table "Connections for Unused Signals."
■ In "Thermal Characteristics" table, corrected thermal resistance value from 34 to 32.
■ In "Reset Characteristics" table, corrected value for supply voltage (VDD) rise time.
■ Additional minor data sheet clarifications and corrections.
7393June 2010
■ Added caution note to the I
2
C Master Timer Period (I2CMTPR) register description and changed
field width to 7 bits.
■ Removed erroneous text about restoring the Flash Protection registers.
■ Added note about RST signal routing.
■ Clarified the function of the TnSTALL bit in the GPTMCTL register.
■ Corrected XTALNPHY pin description.
■ Additional minor data sheet clarifications and corrections.
7007April 2010
■ In "System Control" section, clarified Debug Access Port operation after Sleep modes.
■ Clarified wording on Flash memory access errors.
■ Added section on Flash interrupts.
■ Clarified operation of SSI transmit FIFO.
■ Made these changes to the Operating Characteristics chapter:
– Added storage temperature ratings to "Temperature Characteristics" table
– Added "ESD Absolute Maximum Ratings" table
■ Made these changes to the Electrical Characteristics chapter:
– In "Flash Memory Characteristics" table, corrected Mass erase time
– Added sleep and deep-sleep wake-up times ("Sleep Modes AC Characteristics" table)
– In "Reset Characteristics" table, corrected units for supply voltage (VDD) rise time
6712January 2010
June 22, 201018
Texas Instruments-Production Data
Revision History
