Figure 23-12. Hibernation Module Timing with Internal Oscillator Stopped in Hibernation
32.768 KHz
(internal)
HIB
H4
H1
WAKE
H2
H6
H8
23.11 Flash Memory
Table 23-19. Flash Memory Characteristics
UnitMaxNomMinParameter NameParameter
cycles--15,000Number of guaranteed program/erase cycles
before failure
a
PE
CYC
years--10Data retention, -40˚C to +85˚CT
RET
ms1--Word program timeT
PROG
ms1--Buffer program timeT
BPROG
ms12--Page erase timeT
ERASE
ms16--Mass erase timeT
ME
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
23.12 Input/Output Characteristics
Note: All GPIO signals are 5-V tolerant when configured as inputs except for PB0 and PB1, which
are limited to 3.6 V. See “Signal Description” on page 408 for more information on GPIO
configuration.
Table 23-20. GPIO Module Characteristics
a
UnitMaxNomMinParameter NameParameter
kΩ300-100GPIO internal pull-up resistorR
GPIOPU
kΩ500-200GPIO internal pull-down resistorR
GPIOPD
µA2--GPIO input leakage current
b
I
LKG
ns2014
-
GPIO rise time, 2-mA drive
c
T
GPIOR
ns107GPIO rise time, 4-mA drive
c
ns54GPIO rise time, 8-mA drive
c
ns86GPIO rise time, 8-mA drive with slew rate control
c
ns2114
-
GPIO fall time, 2-mA drive
d
T
GPIOF
ns117GPIO fall time, 4-mA drive
d
ns64GPIO fall time, 8-mA drive
d
ns86GPIO fall time, 8-mA drive with slew rate control
d
a. V
DD
must be within the range specified in Table 23-2 on page 981.
b. The leakage current is measured with GND or V
DD
applied to the corresponding pin(s). The leakage of digital port pins is
measured individually. The port pin is configured as an input and the pullup/pulldown resistor is disabled.
c. Time measured from 20% to 80% of V
DD
.
991July 24, 2012
Texas Instruments-Production Data
Stellaris
®
LM3S6G65 Microcontroller
OBSOLETE: TI has discontinued production of this device.