LM3S610 Data Sheet
October 8, 2006 93
Preliminary
7Internal Memory
The LM3S610 microcontroller comes with 8 KB of bit-banded SRAM and 32 KB of flash memory.
The flash controller provides a user-friendly interface, making flash programming a simple task.
Flash protection can be applied to the flash memory on a 2-KB block basis.
7.1 Block Diagram
Figure 7-1. Flash Block Diagram
7.2 Functional Description
This section describes the functionality of both memories.
7.2.1 SRAM Me mory
The internal SRAM of the Stellaris devices is located at address 0x20000000 of the device
memory map. To reduce the number of time consuming read-modify-write (RMW) operations,
ARM has introduced bit-banding technology in the new Cortex-M3 processor. With a
bit-band-enabled processor , certain regions in the memory map (SRAM and peripheral space) can
use address aliases to access individual bits in a single, atomic operation.
Flash Co n tro l
FMA
FCMIS C
FCIM
FCRIS
FMC
FMD
Fl ash Ti m i ng
USECRL
Fl ash P rotecti on
FMPRE
FMPPE
Flash A rray
SRAM Array
Bridge
Cortex-M3
ICode
DCode
System Bus
APB
