LM10
SNOSBH4D –MAY 1998–REVISED MARCH 2013
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Figure 3. PDIP Package (P) Figure 4.
See Package Number P (R-PDIP-T8)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)(3)
LM10/LM10B/ LM10BL/
LM10C LM10CL
Total Supply Voltage 45V 7V
Differential Input Voltage
(4)
±40V ±7V
Power Dissipation
(5)
internally limited
Output Short-circuit Duration
(6)
continuous
Storage-Temp. Range −55°C to +150°C
Lead Temp. (Soldering, 10 seconds)
TO 300°C
Lead Temp. (Soldering, 10 seconds) DIP 260°C
Vapor Phase (60 seconds) 215°C
Infrared (15 seconds) 220°C
ESD rating is to be determined.
Maximum Junction Temperature
LM10 150°C
LM10B 100°C
LM10C 85°C
(1) Refer to RETS10X for LM10H military specifications.
(2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits.
(3) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(4) The Input voltage can exceed the supply voltages provided that the voltage from the input to any other terminal does not exceed the
maximum differential input voltage and excess dissipation is accounted for when V
IN
<V
−
.
(5) The maximum, operating-junction temperature is 150°C for the LM10, 100°C for the LM10B(L) and 85°C for the LM10C(L). At elevated
temperatures, devices must be derated based on package thermal resistance.
(6) Internal thermal limiting prevents excessive heating that could result in sudden failure, but the IC can be subjected to accelerated stress
with a shorted output and worst-case conditions.
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