Lattice Semiconductor ispXPGA Family Data Sheet
13
Figure 13. EBR Synchronous Read Timing Diagram
Synchronous Write:
The WE signal controls the synchronous write operation. When the WE signal is high, the
write operation begins. Once the address and data are present and the Output Enable (OE) is active, a rising clock
edge (or falling edge depending on polarity) causes the data to be stored into the EBR. Figure 14 illustrates the
synchronous write timing.
Figure 14. EBR Synchronous Write Timing Diagram
Asynchronous Read:
The WE signal controls the asynchronous read operation. When the WE signal is low, the
read operation begins. Shortly after the address is present, the stored data is available on the DATA port. Figure 15
illustrates the asynchronous read timing. For more information about the EBR, refer to Lattice technical note num-
ber TN1028
ispXPGA Memory Usage Guidelines,
available at www.latticesemi.com.
Figure 15. EBR Asynchronous Read Timing Diagram
WE
CLK
CE
DATA
ADDR
OE
Valid Data
Invalid Data
Valid Data
t
EBWEEN
t
EBADDS
t
EBCO
t
EBWES
t
EBCES
t
EBCPW
t
EBOEDIS
t
EBOEEN
t
EBCEH
t
EBWEH
t
EBWEDIS
t
EBADDH
WE
CLK
WRITE
DATA
ADDR
WRITE
t
EBWEH
t
EBADDS
t
EBADDH
t
EBDATAS
t
EBDATAH
t
EBPW
t
EBWES
WE
DATA
ADDR
OE
DATA1
Invalid Data
DATA1
ADDR0
ADDR1 ADDR2
DATA0
t
EBWEEN
t
EBARADO
t
EBOEDIS
t
EBOEEN
t
EBWEDIS
t
EBARAD_H
