3-7
DC and Switching Characteristics
Lattice Semiconductor LatticeECP/EC Family Data Sheet
sysIO Differential Electrical Characteristics
LVDS
Over Recommended Operating Conditions
Parameter
Symbol Parameter Description Test Conditions Min. Typ. Max. Units
V
INP,
V
INM
Input voltage 0 — 2.4 V
V
THD
Differential input threshold +/-100 — — mV
V
CM
Input common mode voltage
100mV ≤ V
THD
V
THD
/2 1.2 1.8 V
200mV ≤ V
THD
V
THD
/2 1.2 1.9 V
350mV ≤ V
THD
V
THD
/2 1.2 2.0 V
I
IN
Input current Power on or power off — — +/-10 µA
V
OH
Output high voltage for V
OP
or V
OM
R
T
= 100 Ohm — 1.38 1.60 V
V
OL
Output low voltage for V
OP
or V
OM
R
T
= 100 Ohm 0.9V 1.03 — V
V
OD
Output voltage differential (V
OP
- V
OM
), R
T
= 100 Ohm 250 350 450 mV
∆V
OD
Change in V
OD
between high and
low
——50mV
V
OS
Output voltage offset (V
OP
- V
OM
)/2, R
T
= 100 Ohm 1.125 1.25 1.375 V
∆V
OS
Change in V
OS
between H and L — — 50 mV
I
OSD
Output short circuit current
V
OD
= 0V Driver outputs
shorted
—— 6mA
