3-2
DC and Switching Characteristics
Lattice Semiconductor LatticeECP/EC Family Data Sheet
DC Electrical Characteristics
Over Recommended Operating Conditions
Symbol Parameter Condition Min. Typ. Max. Units
I
IL,
I
IH
1
Input or I/O Low leakage
0 ≤ V
IN
≤ (V
CCIO
- 0.2V) — — 10 µA
(V
CCIO
- 0.2V) ≤ V
IN
≤ 3.6V — — 40 µA
I
PU
I/O Active Pull-up Current 0 ≤ V
IN
≤ 0.7 V
CCIO
30 — 150 µA
I
PD
I/O Active Pull-down Current V
IL
(MAX) ≤ V
IN
≤ V
IH
(MAX) -30 — -150 µA
I
BHLS
Bus Hold Low sustaining current V
IN
= V
IL
(MAX) 30 — — µA
I
BHHS
Bus Hold High sustaining current V
IN
= 0.7V
CCIO
-30 — — µA
I
BHLO
Bus Hold Low Overdrive current 0 ≤ V
IN
≤ V
IH
(MAX) — — 150 µA
I
BHLH
Bus Hold High Overdrive current 0 ≤ V
IN
≤ V
IH
(MAX) — — -150 µA
V
BHT
Bus Hold trip Points 0 ≤ V
IN
≤ V
IH
(MAX) V
IL
(MAX) — V
IH
(MIN) V
C1 I/O Capacitance
2
V
CCIO
= 3.3V, 2.5V, 1.8V, 1.5V, 1.2V,
V
CC
= 1.2V, V
IO
= 0 to V
IH
(MAX)
—8—pf
C2 Dedicated Input Capacitance
2
V
CCIO
= 3.3V, 2.5V, 1.8V, 1.5V, 1.2V,
V
CC
= 1.2V, V
IO
= 0 to V
IH
(MAX)
—6—pf
1. Input or I/O leakage current is measured with the pin configured as an input or as an I/O with the output driver tri-stated. It is not measured
with the output driver active. Bus maintenance circuits are disabled.
2. T
A
25
o
C, f = 1.0MHz
