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JAN1N5420E3

JAN1N5420E3首页预览图
型号: JAN1N5420E3
PDF文件:
  • JAN1N5420E3 PDF文件
  • JAN1N5420E3 PDF在线浏览
功能描述: VOIDLESS HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
PDF文件大小: 270.78 Kbytes
PDF页数: 共5页
制造商: MICROSEMI[Microsemi Corporation]
制造商LOGO: MICROSEMI[Microsemi Corporation] LOGO
制造商网址: http://www.microsemi.com
捡单宝JAN1N5420E3
PDF页面索引
120%
T4-LDS-0231, Rev. 1 (111902) ©2011 Microsemi Corporation Page 1 of 5
1N5415 thru 1N5420
Available on
commercial
versions
VOIDLESS HERM E TICALLY SEAL E D FAST
RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/411
Qualified Levels:
JAN, JAN TX, JANTXV
and JANS
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications
where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak
reverse voltages from 50 to 600 volts are hermetically sealed wi th voidless-glass construction us ing an
internal “Category 1metallurgical bond. These devices are also availabl e in surface mount MELF
package configurations. Microsemi also offers numerous other rectifier products to m eet higher and
lower current ratings with various recovery time speed requirements including fast and ultrafast device
types in both through-hole and surface mount pa ckag es.
“B” Package
Also available in:
“BSQ-MELF
(D-5B) Package
(s urf ace mount )
1N5415US1N5420US
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
Popular JEDEC registered 1N5415 thru 1N5420 series.
Voidless hermetically sealed glass package.
Quadruple-layer passivation.
Internal “Category 1 metallurgical bonds.
Work ing Peak Reverse V oltage 50 to 600 volts.
JAN, JANTX, JANTXV and JANS qualifications available per MIL-PRF-19500/411.
RoHS compliant versions available (commercial grade only).
APPLICAT IONS / BENE FITS
Fast recovery 3 amp 50 to 600 volt rectifiers.
Military and other high-reliability applic ations.
General rectifier applications including bridges, half-bridges, catch diodes, etc.
High forward surge current capability.
Extremely robust construction.
Low thermal resistance.
Controlled avalanche with peak reverse power capability.
Inherently radiation hard as described in Microsemi “Micr oNote 050 ”.
MAX IMUM RATIN GS
MSCLawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSCIreland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
T
J
and T
STG
-65 to +175
o
C
Thermal Resistance Junction-to-Lead
(1)
R
ӨJL
22
o
C/W
Forward Surge Current @ 8.3 ms ha lf-sine
I
FSM
80
A
Average Rectified Forward Current
(4)
@ T
A
= +55
o
C
@ T
A
= +100
o
C
I
O
(2, 3)
I
O
(3)
3
2
A
Work ing Peak Reverse V oltage 1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
V
RWM
50
100
200
400
500
600
V
Maximum Reverse Recovery Time
(5)
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
t
rr
150
150
150
150
250
400
ns
Solder Temperature @ 10 s
T
SP
260
o
C
S ee n ot es on ne xt page.
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