©2004 Fairchild Semiconductor Corporation Rev. A, February 2004
J271
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Thermal Charac teris tics
T
a
=25°C unless otherwise noted
Symbol Parameter Ratings Units
V
DG
Drain-Gate Voltage 30 V
V
GS
Gate-Source Voltage 30 V
I
GF
Forward Gate Current 50 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Paramet e r Test Condition Min. Max. Units
Off Characteristics
V
(BR)GSS
Gate-Source Breakdwon V oltage I
G
= 1.0µA, V
DS
= 0 30 V
I
GSS
Gate Reverse Current V
GS
= 20V, V
DS
= 0 200 pA
V
GS(off)
Gate-Source Cutoff Voltage V
DS
= -15V, I
D
= 1.0nA 1.5 4.5 V
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current * V
DS
= -15V, V
GS
= 0 -6 -50 mA
Small Signal Characteristics
gfs Forward Transferconductance V
GS
= 0V, V
DS
= 15V, f = 1.0kHz 8000 18000 µmhos
goss Common- Source Output Conductance V
GS
= 0V, V
DS
= 15V, f = 1.0kHz 200 µmhos
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 125 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
J271
P-Channel Switch
• This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 88.
TO-92
1. Drain 2. Gate 3. Source
1
