HANBit HMS4M16M16G
HANBit Electronics Co.,Ltd .
SIMM/ZIP
TOP VIEW
NC
NC
NC
DQ0
DQ1
DQ2
DQ3
Vcc
A7
A8
A9
DQ4
DQ5
DQ6
DQ7
/WE
A14
/CE1
/CE3
A16
Vss
NC
NC
NC
NC
A10
A11
A12
A13
NC
NC
NC
NC
Vss
A19
A20
PIN ASSIGNMENT
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
Vcc
NC
Vss
NC
DQ8
DQ9
DQ10
DQ11
A0
A1
A2
DQ12
DQ13
DQ14
DQ15
Vss
A15
/CE2
/CE4
A17
/OE
NC
NC
NC
NC
A3
A4
A5
Vcc
A6
NC
NC
NC
NC
A18
GENERAL DESCRIPTION
The HM S4 M16M 16G is a high- sp eed sta tic random a c c es s memor y ( SRAM) module containing 2 ,097,152
words organized in 4M x16-bit configura tion. T he module consists of sixteen 1M x 4 SRAMs mounted on a 72-
pin, double-sided, F R4-pr inted circuit board.
Eight chip enable inpu ts , ( /C E1 , / CE 2, /CE3 a nd /CE4) are used to ena ble the module’s 4 byt es independent ly.
Out put ena ble (/OE) and writ e enable (/W E ) can s et t he memory input and ou tp ut .
Dat a is wr itt en int o the SRAM memory when wr ite enab le (/WE) and chip enable (/C E) inp ut s a re b oth LO W .
R eading is ac c omplished when / W E remains HI GH and /C E and out put ena ble (/ O E) are LO W .
F or reliability, t his S RAM module is des i gned as multip le p ower and ground pin. All module component s may b e
powered from a single +5V DC power supply and a ll inputs and outputs are fully T TL-compatible.
FEATURES
Access times : 10, 12, 15, 17 a nd 20ns
High-density 8MByte design
High- reliab ility, high- sp eed design
S ingle + 5V ±10% power supply
Easy memory ex pa nsion /C E and / O E functions
All inputs and outputs are TTL-compatible
Indus try-st andard pinou t
FR4-PCB design
Low profile 72-pin
Part identification
- HMS2M16M8G : SIMM design,Gold
OPTIONS MARKING
Timing
10ns access -10
12ns access -12
15ns access -15
17ns access -17
20ns access -20
Packages
72-pin SIMM M
SRAM MODULE 8Mbyte(4M x 16-Bit)
Part No.
HMS4M16M16G
H A N
B I T