HM2369
- 1 -
30V P-Channel Enhancement-Mode MOSFET 30V P 沟道增强型 MOS 管
Features 特性
Advanced trench process technology 高级的加工技术
High Density Cell Design For Ultra Low On-Resistance 极低的导通电阻高密度的单元设计
Package Dimensions 封装尺寸及外形图
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min. Max.
A 2.70 3.10 G 1.90 REF.
B 2.40 2.80 H 1.00 1.30
C 1.40 1.60 K 0.10 0.20
D 0.35 0.50 J 0.40 -
E 0 0.10 L 0.85 1.15
F 0.45 0.55 M
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25 C unless otherwise noted) 25
o
C 极限参数和热特性
Parameter 极限参数 Symbol 符号 Limit 范围 Unit 单位
Drain-Source Voltage 漏源电压 V
DS
-30
Gate-Source Voltage 栅源电压 V
GS
± 20
V
Continuous Drain Current 连续漏极电流 I
D
-8.0
Pulsed Drain Current
脉冲漏极电流 I
DM
-30
A
TA = 25
o
C 1.2
Maximum Power Dissipation 最大耗散功率
TA = 75
o
C
P
D
0.8
W
Operating Junction and Storage Temperature Range 使用及储存温度 T
J
, T
stg
-55 to 150
o
C
Junction-to-Ambient Thermal Resistance (PCB mounted)
结环热阻
R
θJA
100
o
C/W
SOT-23(PACKAGE)
2369
Marking
D
G
S
5.0
6.0
30m6.0
10 25m
VDS= -30V
RDS(ON), Vgs@- V, Ids@- A
=
Ω
RDS(ON), Vgs@- V, Ids@- A =
Ω
3.0 40m4.5RDS(ON), Vgs@- V, Ids@- A =
Ω
o
