NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0054A DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information
SFF 60 N 90 _E_ ___
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│
│
└
│
│
│
│
│
│
│
└
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│
│
│
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└
└
Screening
2
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package
3
4
12 pin package
Voltage
90 = 900V
Drain Current
60 = 60A
SFF60N90E
60 AMP
, 900 Volts, 0.22 Ω
Avalanche Rated N-channel
HiPower MOSFET
Features:
Rugged poly-Si gate
Lowest ON-resistance in the industry
Avalanche rated
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
TX, TXV, S-Level screening available
Improved (R
DS(ON)
Q
G
) figure of merit
Maximum Ratings
5
Symbol Value Units
Drain - Source Voltage V
DSS
900
V
Gate – Source Voltage
continuous
transient
V
GS
+20
+
30
V
Max. Continuous Drain Current (package limited)
@ T
C
= 25ºC
I
D1
60
A
Max. Instantaneous Drain Current (Tj limited)
@ T
C
= 25ºC
I
D2
150
A
Max. Avalanche current
@ L= 0.1 mH
I
AR
60
A
Single and Repetitive Avalanche Energy
@ L= 0.1 mH
E
AS
E
R
4000
64
mJ
Total Power Dissipation
@ T
C
= 25ºC
P
D
825
W
Operating & Storage Temperature
T
OP
& T
STG
-55 to +150
ºC
Maximum Thermal Resistance
(Junction to Case)
R
θJC
0.15
ºC/W
NOTES: 12 Pin Package
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1
/ For ordering information, price, and availability – contact factory.
2
/ Screening based on MIL-PRF-19500. Screening flows available on request.
3
/ For lead bending options / pinout configurations – contact factory.
4
/ Maximum current limited by package configuration
5
/ Unless otherwise specified, all electrical characteristics @25
o
C.