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FSL230D3

FSL230D3首页预览图
型号: FSL230D3
PDF文件:
  • FSL230D3 PDF文件
  • FSL230D3 PDF在线浏览
功能描述: 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
PDF文件大小: 45.65 Kbytes
PDF页数: 共8页
制造商: INTERSIL[Intersil Corporation]
制造商LOGO: INTERSIL[Intersil Corporation] LOGO
制造商网址: http://www.intersil.com/cda/home
捡单宝FSL230D3
供应商
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  • 深圳市惊羽科技有限公司

    5

    实-单-专-线----135-7521-2775135-7521-2775-------Q-微-恭-候-----有-问-秒-回彭小姐深圳市福田区深南中路3037号南光捷佳大厦2031室11016819

  • FSL230D3
  • HARRIS 
  • CAN-3 
  • ▉▉:2年内 
  • ▉▉:18800 
  • ▉▉¥10一有问必回一特殊渠道一有长期订货一备货HK仓库 

PDF页面索引
120%
3-35
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
June 1998
FSL230D, FSL230R
5A, 200V, 0.460 Ohm, Rad Hard,
SEGR Resistant, N-Channel Power MOSFETs
Features
5A, 200V, r
DS(ON)
= 0.460
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 3.0nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Formerly available as type TA17637.
Description
The Discrete Products Operation of Intersil Corporation has
de v eloped a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Eff ects (SEE), Single Ev ent Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil por tfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
e xposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Symbol
Package
TO-205AF
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSL230D1
10K TXV FSL230D3
100K Commercial FSL230R1
100K TXV FSL230R3
100K Space FSL230R4
D
G
S
S
G
D
File Number 4032.3
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